Researchers Vikash Jangir, Sourojit K. Mazumder, and Sudip K. Mazumder from the Illinois Institute of Technology have made significant strides in the field of high-power optoelectronic switches. Their work, published in the journal Applied Physics Letters, focuses on the performance of switches using Fe-doped β-Ga2O3, a material with promising applications in the energy sector.
The team investigated how the spacing of the anode grid and the wavelength of light used to activate the device affect its performance. They found that using light with a wavelength of 272 nanometers, which is below the material’s bandgap, can activate deep-level defects in the material. This activation leads to more efficient transport of electrical charge through the material, a crucial factor for high-power applications.
The researchers also discovered that the spacing of the anode grid plays a significant role in the device’s performance. By optimizing this spacing to 40 micrometers, they were able to achieve a high peak photocurrent of 4.14 amperes and a low on-resistance of 10.4 ohms. To quantify this performance, they introduced a new figure of merit that combines responsivity and conductance, which attained a record value of 4.7 x 10^-6 S/W.
These findings have practical applications for the energy industry, particularly in the development of high-power optoelectronic switches. Such switches are used in a variety of applications, including power electronics, renewable energy systems, and electric vehicles. The use of Fe-doped β-Ga2O3 in these devices could lead to more efficient and reliable operation, ultimately contributing to a more sustainable energy future.
The research was published in the journal Applied Physics Letters, a publication of the American Institute of Physics. The full study can be accessed here.
This article is based on research available at arXiv.