In the realm of energy materials, a team of researchers from the University of Konstanz and the University of Luxembourg has made a significant stride in understanding and controlling the growth of perovskite crystals, which are promising materials for next-generation solar cells and other optoelectronic devices. Led by Emilia R. Schütz and Lukas Schmidt-Mende, the team’s work focuses on achieving large, defect-free perovskite crystals through a process called methylamine treatment, with nucleation sites directed by pre-patterned seeds.
The researchers found that by using methylamine treatment, they could synthesize millimeter-scale perovskite crystals as a continuous film. This process allows for controlled nucleation and growth of the crystals, which is crucial for enhancing the performance of perovskite-based devices. However, they also identified that certain configurations could lead to unwanted parasitic nucleation, which can hinder the desired crystal growth.
To address this issue, the team employed phase-field simulations and an analytical model to predict and mitigate unwanted nucleation. These tools demonstrated their predictive capability across three distinct material-substrate systems, enabling precise control over nucleation and subsequent crystal growth. Notably, the models only require the nucleation density as a material-specific input, making them broadly applicable to various material systems.
The practical applications of this research for the energy sector are substantial. By achieving controlled two-dimensional crystallization, the team’s work paves the way for improved optoelectronic device performance, particularly in the development of high-efficiency solar cells. The ability to predict and control nucleation and growth processes can lead to more efficient and stable perovskite-based devices, bringing us closer to realizing the full potential of these promising materials in the energy industry.
This research was published in the journal Advanced Materials.
This article is based on research available at arXiv.